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| inchange semiconductor isc product specification isc silicon pnp power transistors BD750/750a description collector-emitter sustaining voltage- : v ceo(sus) = -90v(min)- BD750 = -120v(min)- BD750a high power dissipation complement to type bd751/751a applications designed for high voltage and high power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit BD750 -100 v cev collector-emitter voltage BD750a -130 v BD750 -90 v ceo(sus) collector-emitter voltage BD750a -120 v v ebo emitter-base voltage -7 v i c collector current-continuous -20 a i b b base current-continuous -5 a p c collector power dissipation@t c =25 200 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.875 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistors BD750/750a electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BD750 -90 v ceo(sus) collector-emitter sustaining voltage BD750a i c = -100ma ; i b = 0 -120 v BD750 i c = -7.5a; i b = -0.75a b -1.5 v ce (sat) collector-emitter saturation voltage BD750a i c = -5a; i b = -0.5a b -1.0 v BD750 i c = -7.5a; i b = -0.75a b -1.8 v be (sat) base-emitter saturation voltage BD750a i c = -5a; i b = -0.5a b -1.8 v BD750 v cev = -100v;v be (off) = -1.5v -0.5 i cev collector cutoff current BD750a v cev = -130v;v be (off) = -1.5v -0.5 ma i ebo emitter cutoff current v eb = -7v; i c =0 -1.0 ma BD750 i c = -7.5a ; v ce = -2v 15 60 h fe dc current gain BD750a i c = -5a ; v ce = -2v 25 100 f t current-gain?bandwidth product i c = -0.5a ;v ce = -10v; f test = 1mhz 4 mhz isc website www.iscsemi.cn 2 |
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